1998 ? document no. d16198ej1v0ds00 date published april 2002 n cp(k) printed in japan silicon transistor 2sd1582 npn silicon epitaxial transistor for low-frequency power amplifiers data sheet 2002 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. the 2sd1582 is a single type super high h fe transistor and low collector saturation voltage and high voltage. this transistor is available for broad applications as variety of drives. features ? ultra high h fe h fe = 800 to 3200 (@ v ce = 5.0 v, i c = 300 ma) high voltage and wide aso v cbo = 60 v, v ceo = 50 v low collector saturation voltage v ce(sat) = 0.15 v typ. (@ i c = 500 a, i b = 5.0 ma) absolute maximum ratings (ta = 25 c) parameter symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 15 v collector current (dc) i c(dc) 1.0 a collector current (pulse) i c(pulse) *1.5 a total power dissipation p t 1.0 w junction temperature t j 150 c storage temperature t stg ? 50 to +150 c *pw 10 ms, duty cycle 50% package drawing (unit: mm) electrical characteristics (ta = 25 c) parameter symbol conditions min. typ. max. unit collector cutoff current i cbo v cb = 60 v, i e = 0 100 na emitter cutoff current i ebo v eb = 10 v, i c = 0 100 na dc current gain h fe1 v ce = 5.0 v, i c = 300 ma * 800 1500 3200 ? dc current gain h fe2 v ce = 5.0 v, i c = 1.0 ma * 400 ? dc base voltage v be v ce = 5.0 v, i c = 100 ma * 600 620 700 mv collector saturation voltage v ce(sat) i c = 500 ma, i b = 5.0 ma * 0.15 0.30 v base saturation voltage v be(sat) i c = 500 ma, i b = 5.0 ma * 0.77 1.2 v output capacitance c ob v cb = 10 v, i e = 0, f = 1.0 mhz 18 30 pf gain bandwidth product f t v ce = 10 v, i e = ? 500 ma 150 250 mhz ** pulse test pw 350 s, duty cycle 2% per pulsed h fe 1 /h fe classification m : 800 to 1600 l : 1200 to 2400 k : 2000 to 3200
data sheet d16198ej1v0ds 2 2sd1582 typical characteristics (ta = 25 c)
data sheet d16198ej1v0ds 3 2sd1582
2sd1582 m8e 00. 4 the information in this document is current as of july, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": com puters, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
|
